Tłaczała, M: search on Z-Library

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1

New lines observed in photoluminescence from GaAs grown by MOCVD

M. Ciorga, J. Misiewicz, M. Tłaczała, M. Panek, E. Veje

Journal:

Journal of Luminescence

Year:

1997

Language:

english

File:

PDF, 166 KB

english, 1997

2

Virtual Laboratory With Simulated Nuclear Physics Experiments

Tlaczala, W., Grajner, G., Zaremba, M.

Journal:

IEEE Transactions on Instrumentation and Measurement

Year:

2008

Language:

english

File:

PDF, 922 KB

english, 2008

3

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Investigation of deep energy levels in heterostructures based on GaN by DLTS

Stuchlikova, L., Sebok, J., Rybar, J., Petrus, M., Nemec, M., Harmatha, L., Benkovska, J., Kovac, J., Skriniarova, J., Lalinsky, T., Paskiewicz, R., Tlaczala, M.

Year:

2010

Language:

english

File:

PDF, 153 KB

english, 2010

4

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors

Florovic, M., Kovac, J., Sciana, B., Radziewicz, D., Pucicki, D., Zborowska-Lindert, I., Tlaczala, M., Vavra, I.

Year:

2012

Language:

english

File:

PDF, 570 KB

english, 2012

5

Optical investigations of strained InGaAs quantum wells

G. Sek, M. Ciorga, J. Misiewicz, D. Radziewicz, R. Korbutowicz, M. Panek, M. Tłaczała

Journal:

Advanced Functional Materials

Year:

1997

Language:

english

File:

PDF, 92 KB

english, 1997

6

Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga–Bi solution

M. Ciorga, L. Bryja, J. Misiewicz, R. Paszkiewicz, M. Panek, B. Paszkiewicz, M. Tłaczała

Journal:

Advanced Functional Materials

Year:

1998

Language:

english

File:

PDF, 102 KB

english, 1998

7

Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X-Ray Diffractometry

J. Kozłowski, R. Paszkiewicz, M. Tłaczała

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

8

Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs

B. Sciana, D. Radziewicz, B. Paszkiewicz, M. Tlaczala, M. Utko, P. Sitarek, J. Misiewicz, R. Kinder, J. Kovac

Journal:

Crystal Research and Technology

Year:

2001

Language:

english

File:

PDF, 209 KB

english, 2001

9

MOVPE GaN Grown on Alternative Substrates

R. Paszkiewicz, B. Paszkiewicz, R. Korbutowicz, J. Kozlowski, M. Tlaczala, L. Bryja, R. Kudrawiec, J. Misiewicz

Journal:

Crystal Research and Technology

Year:

2001

Language:

english

File:

PDF, 550 KB

english, 2001

10

Preparation of InN epitaxial layers in InCl3NH3 system

Dr. L. A. Marasina, I. G. Pichugin, M. Tlaczala

Journal:

Crystal Research and Technology

Year:

1977

Language:

english

File:

PDF, 276 KB

english, 1977

11

Cross-sectional and surface Raman mapping of thick GaN layers

R. Korbutowicz, M. Tłaczała, J. Kovač, G. Irmer, R. Srnanek

Journal:

Crystal Research and Technology

Year:

2008

Language:

english

File:

PDF, 168 KB

english, 2008

12

The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire

V. V. Malinovsky, L. A. Marasina, I. G. Pichugin, M. Tlaczala

Journal:

Crystal Research and Technology

Year:

1982

Language:

english

File:

PDF, 347 KB

english, 1982

13

Investigations of GaAs layers deposited from GaAsBi solution

M. Panek, M. Ratuszek, Dr. M. Tlaczala

Journal:

Crystal Research and Technology

Year:

1985

Language:

english

File:

PDF, 295 KB

english, 1985

14

LPE grown GaAs layers from Ga-As-Bi solution

M. Panek, M. Ratuszek, M. TŁaczaŁa

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 410 KB

english, 1986

15

Ga-As-Bi phase equilibrium study by LPE for thin solutions

Z. Helak, R. Korbutowicz, M. Panek, R. Paszkiewicz, M. Tłaczała

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 336 KB

english, 1991

16

System of IC-modules of nanosecond electronics with computer control in the CAMAC system

S.G. Basiladze, Li Van Sun, A.N. Parfionov, W. Tlaczala

Journal:

Nuclear Instruments and Methods

Year:

1975

Language:

english

File:

PDF, 175 KB

english, 1975

17

Calculation of the efficiency and losses of electronics for drift chambers

S.G. Basiladze, W. Tlaczala

Journal:

Nuclear Instruments and Methods

Year:

1977

Language:

english

File:

PDF, 218 KB

english, 1977

18

Electronic spectroscopy and trichromaticity colorimetry of some inorganic pigments and their mixtures

T. Tłaczała, A. Bartecki

Journal:

Dyes and Pigments

Year:

1995

Language:

english

File:

PDF, 453 KB

english, 1995

19

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy

J. Misiewicz, R. Kudrawiec, M. Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tłaczała

Journal:

Microelectronics Journal

Year:

2005

Language:

english

File:

PDF, 125 KB

english, 2005

20

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy

R. Srnanek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Microelectronics Journal

Year:

2008

Language:

english

File:

PDF, 696 KB

english, 2008

21

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures

R. Srnanek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Microelectronics Journal

Year:

2008

Language:

english

File:

PDF, 414 KB

english, 2008

22

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

R Srnanek, J Geurts, M Lentze, G Irmer, D Donoval, P Brdecka, P Kordos, A Förster, B Sciana, D Radziewicz, M Tlaczala

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

23

Micro-Raman study of photoexcited plasma in GaAs bevelled structures

R. Srnanek, G. Irmer, J. Geurts, M. Lentze, D. Donoval, B. Sciana, D. Radziewicz, M. Tlaczala, M. Florovic, I. Novotny

Journal:

Applied Surface Science

Year:

2005

Language:

english

File:

PDF, 403 KB

english, 2005

24

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

R. Srnanek, G. Irmer, D. Donoval, I. Novotny, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 1005 KB

english, 2008

25

Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

R. Paszkiewicz, B. Paszkiewicz, M. Wosko, A. Szyszka, L. Marciniak, J. Prażmowska, W. Macherzyński, J. Serafińczuk, J. Kozłowski, M. Tlaczala, J. Kováč, I. Novotný, J. Škriniarová, D. Haško

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 644 KB

english, 2008

26

AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE

Beata Ściana, Iwona Zborowska-Lindert, Damian Radziewicz, Bogusław Boratyński, Marek Tłaczała, Jaroslav Kováč, Rudolf Srnanek, Jaroslava Škriniarová, Martin Florovič

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 1.28 MB

english, 2008

27

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor

J. Kováč, J. Škriniarová, M. Florovič, J. Jakabovič, J. Chovan, R. Srnánek, A. Vincze, B. Ściana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczała

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 497 KB

english, 2009

28

Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures

R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 209 KB

english, 2009

29

Long-lived persistent currents in poly(3-octylthiophene) thin film transistors

Petro Lutsyk, Krzysztof Janus, Mikołaj Mikołajczyk, Juliusz Sworakowski, Bogusław Boratyński, Marek Tłaczała

Journal:

Organic Electronics

Year:

2010

Language:

english

File:

PDF, 1.56 MB

english, 2010

30

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

R. Srnanek, J. Geurts, M. Lentze, G. Irmer, J. Kovac, D. Donoval, D.S. Mc Phail, P. Kordos, M. Florovic, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

31

Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

B. Ściana, D. Radziewicz, B. Paszkiewicz, M. Tłaczała, P. Sitarek, R. Kudrawiec, J. Misiewicz, J. Kovác̆, M. Florovic̆

Journal:

Year:

2004

Language:

english

File:

PDF, 407 KB

english, 2004

32

Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples

R. Srnanek, M. Vesely, A. Vincze, M. Florovic, J. Kovac, G. Irmer, P. Prunici, D.S. Mc Phail, B. Sciana, D. Radziewicz, M. Tlaczala

Journal:

Year:

2005

Language:

english

File:

PDF, 250 KB

english, 2005

33

Functionally graded semiconductor layers for devices application

B. Paszkiewicz, R. Paszkiewicz, M. Wosko, D. Radziewicz, B. Ściana, A. Szyszka, W. Macherzynski, M. Tłaczała

Journal:

Year:

2007

Language:

english

File:

PDF, 807 KB

english, 2007

34

APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

B. Ściana, D. Pucicki, D. Radziewicz, J. Serafińczuk, J. Kozłowski, B. Paszkiewicz, M. Tłaczała, P. Poloczek, G. Sęk, J. Misiewicz

Journal:

Year:

2007

Language:

english

File:

PDF, 564 KB

english, 2007

35

New nanocrystalline powder substrates for nitrides layer epitaxy

M. Wośko, A. Szyszka, B. Paszkiewicz, R. Paszkiewicz, J. Serafińczuk, M. Tłaczała, A. Podhorodecki, G. Sęk, J. Misiewicz, A. Olszyna, K. Biesiada, K. Kościewicz

Journal:

Year:

2008

Language:

english

File:

PDF, 1017 KB

english, 2008

36

Study of grain boundaries influence on electrical properties of nitrides

A. Szyszka, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała

Journal:

Year:

2008

Language:

english

File:

PDF, 989 KB

english, 2008

37

Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

J. Prażmowska, R. Korbutowicz, R. Paszkiewicz, A. Szyszka, J. Serafińczuk, A. Podhorodecki, J. Misiewicz, M. Tłaczała

Journal:

Year:

2008

Language:

english

File:

PDF, 970 KB

english, 2008

38

Oscillation reactions in the system: Metabolites of krebs cycle-Mn2+-KBrO3-H2SO4

J.Masełko T. Tłaczala, M. Czerwiński, J. Michałczyk, Z. Sikorski

Journal:

Bioinorganic Chemistry

Year:

1978

Language:

english

File:

PDF, 483 KB

english, 1978

39

Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

R. Paszkiewicz, B. Paszkiewicz, J. Kozlowski, M. Piasecki, W. Kosnikowski, M. Tlaczala

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 135 KB

english, 2003

40

Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation

M Nowaczyk, G Sęk, J Misiewicz, B Ściana, D Radziewicz, M Tłaczała

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1007 KB

english, 2000

41

Surface and interface of GaAsSI-GaAs structures investigated by photoreflectance spectroscopy

K Jezierski, P Sitarek, J Misiewicz, M Panek, B Ściana, R Korbutowicz, M Tłaczała

Journal:

Year:

1997

Language:

english

File:

PDF, 406 KB

english, 1997

42

Growth and characterisation of GaN epitaxial layers

R Paszkiewicz, R Korbutowicz, D Radziewicz, M Panek, B Paszkiewicz, J Kozlowski, B Boratynski, M Tlaczala, SV Novikov

Journal:

Year:

1998

Language:

english

File:

PDF, 407 KB

english, 1998

43

Field emission from GaN deposited on the (100) Si substrate

W Czarczyński, St Lasisz, M Moraw, R Paszkiewicz, M Tlaczala, Z Znamirowski

Journal:

Applied Surface Science

Year:

1999

Language:

english

File:

PDF, 754 KB

english, 1999

44

Distribution of the lateral correlation length in GaN epitaxial layers

J Kozlowski, R Paszkiewicz, R Korbutowicz, M Tlaczala

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 104 KB

english, 2001

45

Photoreflectance investigations of GaN epitaxial layers

P Sitarek, R Kudrawiec, G Sęk, J Misiewicz, R Paszkiewicz, R Korbutowicz, B Paszkiewicz, M Tłaczała

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 79 KB

english, 2001

46

Room temperature photoreflectance of different electron concentration GaN epitaxial layers

R Kudrawiec, G Sęk, J Misiewicz, R Paszkiewicz, B Paszkiewicz, M Tłaczała

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 188 KB

english, 2002

47

The influence of MOCVD process scheme on the optical properties of GaN layers

M Ciorga, L Bryja, J Misiewicz, R Paszkiewicz, R Korbutowicz, M Panek, B Paszkiewicz, M Tłaczała

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 97 KB

english, 1999

48

Interface and Surface Photoreflectance Spectra for GaAs/Si-GaAs Structures

K. Jezierski, J. Misiewicz, P. Markiewicz, M. Panek, B. Ściana, M. Tlaczała, R. Korbutowicz

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 386 KB

english, 1995

49

Photoreflectance spectroscopy of MOCVD grown GaAs epilayers

J. Misiewicz, P. Markiewicz, J. Rębisz, Z. Gumienny, M. Panek, B. Ściana, M. Tłaczała

Journal:

physica status solidi (b)

Year:

1994

Language:

english

File:

PDF, 175 KB

english, 1994

50

Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures

R. Kudrawiec, M. Syperek, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. Tłaczała, W. Strupinski

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 113 KB

english, 2004

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